Complete matrix properties of [001]c and [011]c poled 0.33Pb(In1/2Nb1/2)O3-0.38Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals
Identifieur interne : 000309 ( Chine/Analysis ); précédent : 000308; suivant : 000310Complete matrix properties of [001]c and [011]c poled 0.33Pb(In1/2Nb1/2)O3-0.38Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals
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Abstract
The elastic, piezoelectric, and dielectric properties of [001]c and [011]c poled 0.33Pb(In1/2Nb1/2) O3-0.38Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystals have been fully characterized at room temperature, and the temperature and frequency dependence of the dielectric susceptibility ε33 were also measured. The depoling temperature of this crystal is more than 20 °C higher than that of the corresponding binary 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 system. From the measured P-E hysteresis loops, the coercive fields along [001]c and [011]c directions have been determined to be 6.0 kV/cm and 6.6 kV/cm, respectively, which indicate that these domain engineered ternary relaxor-based ferroelectric single crystals are excellent candidates for high-power applications.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Complete matrix properties of [001]<sub>c</sub> and [011]<sub>c</sub> poled 0.33Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-0.38Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.29PbTiO<sub>3</sub> single crystals</title><author><name>ENWEI SUN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Science and Technology Institute, Harbin Institute of Technology</s1><s2>Harbin 150080</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150080</wicri:noRegion></affiliation></author><author><name>RUI ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Science and Technology Institute, Harbin Institute of Technology</s1><s2>Harbin 150080</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150080</wicri:noRegion></affiliation></author><author><name>FENGMIN WU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Science and Technology Institute, Harbin Institute of Technology</s1><s2>Harbin 150080</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150080</wicri:noRegion></affiliation></author><author><name>WENWU CAO</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Science and Technology Institute, Harbin Institute of Technology</s1><s2>Harbin 150080</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Harbin 150080</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Materials Research Institute, The Pennsylvania State University</s1><s2>University Park, PA 16802</s2><s3>USA</s3><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>University Park, PA 16802</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0127954</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0127954 INIST</idno><idno type="RBID">Pascal:13-0127954</idno><idno type="wicri:Area/Main/Corpus">001065</idno><idno type="wicri:Area/Main/Repository">001030</idno><idno type="wicri:Area/Chine/Extraction">000309</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-8388</idno><title level="j" type="abbreviated">J. alloys compd.</title><title level="j" type="main">Journal of alloys and compounds</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary systems</term><term>Coercive force</term><term>Dielectric properties</term><term>Dielectric susceptibility</term><term>Ferroelectric hysteresis</term><term>Ferroelectric materials</term><term>Frequency dependence</term><term>Indium Lead Niobates Mixed</term><term>Lead magnesium niobates</term><term>Monocrystals</term><term>Piezoelectricity</term><term>Poling</term><term>Relaxor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Polarisation périodique</term><term>Piézoélectricité</term><term>Propriété diélectrique</term><term>Dépendance fréquence</term><term>Susceptibilité diélectrique</term><term>Force coercitive</term><term>Hystérésis ferroélectrique</term><term>Monocristal</term><term>Relaxeur</term><term>Matériau ferroélectrique</term><term>Indium Plomb Niobate Mixte</term><term>Système binaire</term><term>Magnoniobate de plomb</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The elastic, piezoelectric, and dielectric properties of [001]<sub>c </sub>and [011]<sub>c </sub>poled 0.33Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>) O<sub>3</sub>-0.38Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.29PbTiO<sub>3</sub> single crystals have been fully characterized at room temperature, and the temperature and frequency dependence of the dielectric susceptibility ε<sub>33</sub> were also measured. The depoling temperature of this crystal is more than 20 °C higher than that of the corresponding binary 0.71Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.29PbTiO<sub>3</sub> system. From the measured P-E hysteresis loops, the coercive fields along [001]<sub>c</sub> and [011]c directions have been determined to be 6.0 kV/cm and 6.6 kV/cm, respectively, which indicate that these domain engineered ternary relaxor-based ferroelectric single crystals are excellent candidates for high-power applications.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-8388</s0></fA01><fA03 i2="1"><s0>J. alloys compd.</s0></fA03><fA05><s2>553</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Complete matrix properties of [001]<sub>c</sub> and [011]<sub>c</sub> poled 0.33Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-0.38Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.29PbTiO<sub>3</sub> single crystals</s1></fA08><fA11 i1="01" i2="1"><s1>ENWEI SUN</s1></fA11><fA11 i1="02" i2="1"><s1>RUI ZHANG</s1></fA11><fA11 i1="03" i2="1"><s1>FENGMIN WU</s1></fA11><fA11 i1="04" i2="1"><s1>WENWU CAO</s1></fA11><fA14 i1="01"><s1>Condensed Matter Science and Technology Institute, Harbin Institute of Technology</s1><s2>Harbin 150080</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Materials Research Institute, The Pennsylvania State University</s1><s2>University Park, PA 16802</s2><s3>USA</s3><sZ>4 aut.</sZ></fA14><fA20><s1>267-269</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>1151</s2><s5>354000502447230470</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0127954</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of alloys and compounds</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The elastic, piezoelectric, and dielectric properties of [001]<sub>c </sub>and [011]<sub>c </sub>poled 0.33Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>) O<sub>3</sub>-0.38Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.29PbTiO<sub>3</sub> single crystals have been fully characterized at room temperature, and the temperature and frequency dependence of the dielectric susceptibility ε<sub>33</sub> were also measured. The depoling temperature of this crystal is more than 20 °C higher than that of the corresponding binary 0.71Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.29PbTiO<sub>3</sub> system. From the measured P-E hysteresis loops, the coercive fields along [001]<sub>c</sub> and [011]c directions have been determined to be 6.0 kV/cm and 6.6 kV/cm, respectively, which indicate that these domain engineered ternary relaxor-based ferroelectric single crystals are excellent candidates for high-power applications.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70G65</s0></fC02><fC02 i1="02" i2="3"><s0>001B70G22</s0></fC02><fC02 i1="03" i2="3"><s0>001B70G80D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Polarisation périodique</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Poling</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Piézoélectricité</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Piezoelectricity</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Propriété diélectrique</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Dielectric properties</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Dépendance fréquence</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Frequency dependence</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Susceptibilité diélectrique</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Dielectric susceptibility</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Susceptibilidad dieléctrica</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Force coercitive</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Coercive force</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Hystérésis ferroélectrique</s0><s5>09</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Ferroelectric hysteresis</s0><s5>09</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Histéresis ferroeléctrica</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Monocristal</s0><s5>15</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Monocrystals</s0><s5>15</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Relaxeur</s0><s5>16</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Relaxor</s0><s5>16</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Matériau ferroélectrique</s0><s5>17</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Ferroelectric materials</s0><s5>17</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Indium Plomb Niobate Mixte</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Indium Lead Niobates Mixed</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Système binaire</s0><s5>19</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Binary systems</s0><s5>19</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Magnoniobate de plomb</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Lead magnesium niobates</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="13" i2="3" l="SPA"><s0>Niobato de Magnesio y plomo</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>105</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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